PART |
Description |
Maker |
2SK2768-01L 2SK2654-01 2SK2647-01MR |
3.5 A, 900 V, 5.5 ohm, N-CHANNEL, Si, POWER, MOSFET 8 A, 900 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P 4 A, 800 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F15
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NS471Q6 NS471B5 |
RES THNFLM NET 9M OHM/900K OHM/90K OHM/9K OHM/900 OHM/100 OH - Bulk CNS 471 Decade Divider, Single-In-Line Through Hole Thin Film Resistor Networks (Standard)
|
Vishay Sfernice
|
2SK1942-01 |
N-channel MOS-FET 3 A, 900 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fuji Electric Holdings Co., Ltd. FUJI[Fuji Electric]
|
2SK2006-4072 |
5 A, 900 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET
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IXFX52N30Q IXFX16N90Q |
52 A, 300 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET 16 A, 900 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IXYS CORP
|
FQPF2N90 |
900V N-Channel MOSFET 1.4 A, 900 V, 7.2 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
FQA11N90C |
900V N-Channel MOSFET 11 A, 900 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET 900V N-Channel Advanced QFET C-Series
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
2SK2480 2SK2480-AZ |
3 A, 900 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 MOS Field Effect Transistor SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC Corp. NEC[NEC]
|
APT64GA90LD30 |
Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-264; BV(CES) (V): 900; VCE(sat) (V): 3.1; IC (A): 64; 117 A, 900 V, N-CHANNEL IGBT, TO-264AA
|
Microsemi, Corp.
|
APT46GA90JD40 |
High Speed PT IGBT Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation Microsemi, Corp.
|
IXFB52N90P |
Polar Power MOSFET HiPerFET 52 A, 900 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IXYS Corporation
|
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